They are the base minority carrier diffusion length, the diode dark saturation current and the front surface recombination velocity in order. Among various factors affecting the efficiency of the epitaxial CSiTF solar cell, we identified the three largest efficiency-affecting parameters. On this basis, we comprehensively and systematically investigated the effect of physical parameters of back surface field (BSF) layer, base and emitter, electrical quality of crystalline silicon active layer, situation of surface passivation, internal recombination and p-n junction leakage on the optoelectronic performance of the epitaxial CSiTF solar cell.
In order to make simulation results closer to the actual situation, we adopted a more realistic device structure and parameters. In this paper, we performed device simulation on the epitaxial CSiTF solar cell by using PC1D software.
Because crystalline silicon thin film (CSiTF) solar cells possess the advantages of crystalline silicon solar cells such as high efficiency and stable performance and those of thin film solar cells such as low cost and so on, it is regarded as the next generation solar cell technology, which is most likely to replace the existing crystalline silicon solar cell technology.
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